发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A semiconductor device and a method for fabricating the same are provided. The method includes: forming a plurality of protruded patterns smaller than gate structures by selectively removing predetermined portions of a substrate; and forming the gate structures over the protruded patterns. The semiconductor device includes: a plurality of protruded substrate portions smaller than the gate structures; and a plurality of gate structures encompassing the protruded substrate portions. Each of the gate structures includes a gate conductive layer that extends below the top and along profiles of the corresponding protruded portion such that channels are formed on surfaces of the protruded portions. |
申请公布号 |
US2012049253(A1) |
申请公布日期 |
2012.03.01 |
申请号 |
US201113291955 |
申请日期 |
2011.11.08 |
申请人 |
BAE SANG-MAN;PARK DONG-HEOK;HYNIX SEMICONDUCTOR INC. |
发明人 |
BAE SANG-MAN;PARK DONG-HEOK |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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