WAFER THERMAL TREATMENT METHOD, MANUFACTURING METHOD OF SILICON WAFER, SILICON WAFER, AND THERMAL TREATMENT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon wafer thermal treatment method that can securely suppress slip dislocation occurring from a silicon wafer supported position during thermal treatment performed on the wafer.

SOLUTION: A wafer thermal treatment method comprises performing thermal treatment at a predetermined temperature with rapid temperature rise and fall by heating a main surface (first main surface) of a wafer with a heat source in a state that the main surface is supported by a support member. The wafer thermal treatment method comprises performing the thermal treatment while the heat source is controlled so that the temperature of the first main surface supported by the support member is higher by 1-25°C than the temperature of a main surface (second main surface) of the wafer on the side opposite to the first main surface.

COPYRIGHT: (C)2012,JPO&INPIT