发明名称 Method and Apparatus for Thin Film Memory
摘要 A multi-layer thin-film device includes thin film memory and thin film logic. The thin film memory may be programmable resistance memory, such as phase change memory, for example. The thin film logic may be complementary logic.
申请公布号 US2012052651(A1) 申请公布日期 2012.03.01
申请号 US201113291127 申请日期 2011.11.08
申请人 LOWREY TYLER 发明人 LOWREY TYLER
分类号 H01L21/62 主分类号 H01L21/62
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