| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a wafer processing method capable of reducing wafer damages when grinding a wafer extremely thinly. <P>SOLUTION: A processing method of a wafer 2 where a film layer 5 is formed on a surface and a chamfer part 8 is formed on a peripheral side surface comprises: a cutting step of circularly cutting and removing the film layer 5 at least on the chamfer part 8 by rotating the wafer 2 while cutting a cutting blade 18 into an outer peripheral edge from a surface 2a of the wafer 2; a protective tape sticking step of sticking the protective tape to the surface 2a of the wafer 2 after performing the cutting step; and a grinding step of grinding the reverse side of the wafer 2 on which the protective tape has been stuck to the surface 2a. <P>COPYRIGHT: (C)2012,JPO&INPIT |
