发明名称 CVD DEVICE FOR CARBON NANOTUBE FORMATION
摘要 <P>PROBLEM TO BE SOLVED: To provide a CVD device for carbon nanotube formation capable of unnecessitating cleaning of the inside of a reaction tube. <P>SOLUTION: The CVD device is a thermal CVD device 1 for forming carbon nanotubes by thermal chemical vapor deposition method by supplying a raw material gas G to surfaces of substrates K horizontally arranged in a reaction tube 21. The CVD device includes a substrate holder body 11 capable of holding a plurality of substrates K above and below with a prescribed gap therebetween in the reaction tube 21, and a pedestal plate 19 on which the substrate holder body 11 is mounted. The inside of the reaction tube 21 is divided by the substrate holder body 11 holding the substrates K into a reaction space 7, to which the raw material gas G is supplied, between a lower substrate K surface and the pedestal plate 19 and between the substrates K, and a non-reaction space 8, to which the raw material gas G is not supplied, between the internal surface of the reaction tube 21 and both an upper substrate K surface and a pedestal plate 19 surface. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012041241(A) 申请公布日期 2012.03.01
申请号 JP20100185697 申请日期 2010.08.23
申请人 HITACHI ZOSEN CORP 发明人 MIZUTA KENJI;YANO ATSUSHI
分类号 C01B31/02;C23C16/26 主分类号 C01B31/02
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