| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a leakage current is less likely to be generated, and that is suitable for low power consumption. <P>SOLUTION: A semiconductor device includes: a plurality of bit lines BL embedded in a semiconductor substrate 12 and extendedly present in parallel to an X-direction; a word line extendedly present in a Y-direction crossing with the X-direction; a memory cell M provided at an intersection of the bit line BL and a second wire; and a dummy bit line DBL provided outside the outermost bit line BL among the plurality of bit lines BL, and extendedly present in the X-direction and running in parallel to the bit lines BL. The dummy bit line DBL includes dummy bit lines (first dummy wires) DBL<0>, DBL<1>, and DBL<2> to which the same potential as a potential supplied to the semiconductor substrate 12 is supplied. <P>COPYRIGHT: (C)2012,JPO&INPIT |
