| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a power semiconductor module which inhibits spreading of cracks occurring at a solder bonded part. <P>SOLUTION: The power semiconductor module comprises an insulating substrate 2 including an insulating plate 13 and a wiring layer 12 provided on a principal surface of the insulating plate 13, a semiconductor element fixed to the wiring layer, an internal electrode 9 having a bonding surface substantially parallel with the principal surface of the insulating plate 13, the bonding surface bonded on the wiring layer with a solder layer 10, and a collar-shaped protrusion 21 protruding from the internal electrode 9 into a region covered with the solder layer 10 in a direction substantially parallel with the bonding surface. <P>COPYRIGHT: (C)2012,JPO&INPIT |
