发明名称 |
Gate-to-ohmic metal contact scheme for III-V devices |
摘要 |
A direct shorting contact structure comprising a metal layer (18') makes ohmic contact with a source (10) and/or drain (12) region and with a gate electrode (22). The direct contact between source or drain and gate over the active region (16) reduces the area otherwise required for such contact and eliminates a second layer (24) of interconnection metallization otherwise required for such contact. The metal layer preferably comprises a first layer (18'a) of a material selected from the group consisting of gold-germanium, nickel-germanium, gold-germanium-nickel, molybdenum-germanium, and aluminum-germanium in ohmic contact with the source or drain region and with the gate electrode and a second layer (18'b) of a good electrically conductive, thermally stable, electromigration-resistant metal capable of providing good step coverage overlying the first layer. An example of the second layer is tungsten and its nitrides and silicides. Such a composite layer avoids step coverage and reliability problems which exist with other metallization schemes.
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申请公布号 |
US5254483(A) |
申请公布日期 |
1993.10.19 |
申请号 |
US19920846225 |
申请日期 |
1992.03.04 |
申请人 |
VITESSE SEMICONDUCTOR CORPORATION |
发明人 |
FORGERSON, II, C. DAVID;JOHNSON, DAVID A. |
分类号 |
H01L29/417;H01L29/45;(IPC1-7):H01L21/265 |
主分类号 |
H01L29/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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