PROCEDIMENTO DI METALLIZZAZIONE IMPIEGANTE UNO STRATO DI NITRURO DI TITANIO AMORFO.

摘要

The metallization process is characterized in that an amorphous titanium nitride layer (10) is formed between a titanium layer (7) and an aluminium layer (5) either by carrying out a reactive-sputtering from a titanium target containing another larger sized metal atoms, or by carrying out a cosputtering from both a titanium target and another metal target. According to the present invention, the formation of metal spikes can be inhibited, and therefore, the occurrence of current leakage and the destruction of the junction can be prevented.