发明名称 |
Modified hybrid orientation technology |
摘要 |
A semiconductor process and apparatus includes forming first and second metal gate electrodes (151, 161) over a hybrid substrate (17) by forming the first gate electrode (151) over a first high-k gate dielectric (121) and forming the second gate electrode (161) over at least a second high-k gate dielectric (122) different from the first gate dielectric (121). By forming the first gate electrode (151) over a first SOI substrate (90) formed by depositing (100) silicon and forming the second gate electrode (161) over an epitaxially grown (110) SiGe substrate (70), a high performance CMOS device is obtained which includes high-k metal PMOS gate electrodes (161) having improved hole mobility. |
申请公布号 |
US8125032(B2) |
申请公布日期 |
2012.02.28 |
申请号 |
US20090421247 |
申请日期 |
2009.04.09 |
申请人 |
ADETUTU OLUBUNMI O.;SADAKA MARIAM G.;WHITE TED R.;NGUYEN BICH-YEN;FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ADETUTU OLUBUNMI O.;SADAKA MARIAM G.;WHITE TED R.;NGUYEN BICH-YEN |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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