Semiconductor outlier identification using serially-combined data transform processing methodologies

摘要

A method for identifying outlier semiconductor devices from a plurality of semiconductor devices includes performing at least one electrical test to obtain electrical test data including at least one test parameter, applying at least a first data transform processing methodology to the electrical test data to generate processed test data, and applying a second data transform processing methodology that is different from the first data transform processing methodology to process the processed test data. The second data transform processing methodology applies an outlier test limit to identify non-outlier devices that comprise semiconductor devices from the semiconductor devices that conform to the outlier test limit and outlier devices that do not conform to the outlier test limit. The semiconductor devices are dispositioned using the outlier identification results. At least one of the data transform processing methodologies can include statistics.