| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light-emitting element capable of growing a uniform crystal on a substrate having unevenness. <P>SOLUTION: The method for manufacturing the semiconductor light-emitting element comprises a step for growing up the crystal of nitride semiconductor on a principal plane of the substrate having the principal plane in which the unevenness is prepared. A buffer layer including Ga<SB POS="POST">x</SB>Al<SB POS="POST">1-x</SB>N (0.1≤x<0.5) and having thickness of 20 nm or more and 50 nm or less is deposited on the principal plane at speed of 0.1 μm/h or less, and the crystal including the nitride semiconductor is grown up on the buffer layer at a temperature higher than that of the substrate in deposition of the buffer layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
