| 摘要 |
<P>PROBLEM TO BE SOLVED: To overcome the difficulty of achieving a targeted value of Qsw in regard to a ferroelectric capacitor produced by forming a SrRuO<SB POS="POST">3</SB>film on a ferroelectric film, and forming electrodes of e.g., iridium oxide thereon by a conventional method. <P>SOLUTION: A ferroelectric capacitor manufacturing method includes: forming a lower electrode film on a substrate; forming a ferroelectric film on the lower electrode film; forming, on the ferroelectric film, an amorphous interlayer made of a conductive oxide having a perovskite structure; forming, on the interlayer, a first upper electrode film made of an oxide of at least one metal selected from the group comprising Pt, Pd, Rh, Ir, Ru and Os; crystallizing the interlayer by a first thermal treatment under an atmosphere containing an oxidizing gas after the formation of the first upper electrode film; and forming, on the first upper electrode film, a second upper electrode film made of an oxide of at least one metal selected from the group comprising Pt, Pd, Rh, Ir, Ru and Os at a temperature lower than a film growth temperature adopted in forming the first upper electrode film after the first thermal treatment. <P>COPYRIGHT: (C)2012,JPO&INPIT |
