| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the lifetime characteristics of an element by preventing deterioration of the resonator surface. <P>SOLUTION: The nitride semiconductor laser element includes a nitride semiconductor layer having a resonator surface at the end of a waveguide region, and an insulating film provided on the top face of the nitride semiconductor layer which is substantially perpendicular to the resonator surface with the end on the resonator surface side being separated from the resonator surface. The nitride semiconductor laser element is further provided with a first film formed from the resonator surface to the top face of the nitride semiconductor layer and the surface of the insulating film. The first film is formed of a material Al<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>N(0<x≤1) which is different from the insulating film, and has a first region in contact with the nitride semiconductor layer and a second region in contact with the insulating film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
