发明名称 DRIVING METHOD FOR RESISTANCE CHANGE ELEMENT, AND NONVOLATILE STORAGE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a driving method for a resistance change element capable of operating with good endurance characteristics. <P>SOLUTION: The driving method includes: a writing step of applying a writing voltage pulse having a first polarity to the element so as to change a resistance state of a transition metal oxide layer 3 from a high resistance state to a low resistance state; an erasing step of applying an erasing voltage pulse having a second polarity different from the first polarity, so as to change the resistance state of the transition metal oxide layer 3 from the low resistance state to a high resistance state; a breaking step of applying an initial voltage pulse having the second polarity prior to the first time writing step, so as to form a conductive path in the transition metal oxide layer 3 to decrease a resistance value in the initial state; and an additional processing step, after the breaking step and prior to the first time writing step, of applying an additional process voltage pulse having a voltage value equal to or larger than that of the erasing voltage pulse and having the second polarity, so as to further decrease the resistance value of the transition metal oxide layer 3 after breaking. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012038372(A) 申请公布日期 2012.02.23
申请号 JP20100175813 申请日期 2010.08.04
申请人 PANASONIC CORP 发明人
分类号 G11C13/00;H01L27/10;H01L45/00;H01L49/00 主分类号 G11C13/00
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