| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bottom-gate type thin film transistor with less change in shape in a sub-threshold region of a transfer characteristic. <P>SOLUTION: A bottom-gate type thin film transistor comprises in this order on a substrate, a gate electrode layer, a gate insulation layer, and an oxide semiconductor layer in which a channel region, a source region, and a drain region are formed in one layer and the source region and the drain region are provided via the channel region. At least a part of a corner of an end part in the width direction of each of the source region and the drain region on the side closer to the channel region is positioned inward as compared with an end part of the channel region on the same side as the end part. <P>COPYRIGHT: (C)2012,JPO&INPIT |
