| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light-emitting element capable of suppressing the degradation of an active layer. <P>SOLUTION: A method is provided for manufacturing a semiconductor light-emitting element having a crystalline layer containing a nitride semiconductor. The nitride semiconductor comprises In atoms and Ga atoms, and the ratio xs of the number of In atoms with respect to the sum of the number of In atoms and the number of Ga atoms satisfies 0.2≤xs≤0.4. The manufacturing method comprises a step for forming the crystalline layer by supplying a source gas including first molecules containing Ga atoms and second molecules containing In atoms on a main surface of a substrate. The ratio of second partial pressure with respect to the sum of a first partial pressure for the first molecules and degradation species of the first molecules to the source gas and a second partial pressure for the second molecules and degradation species of the second molecules to the source gas is set to be a vapour phase feed ratio xv of In. (1-1/xv)/(1-1/xs) is less than 0.1. <P>COPYRIGHT: (C)2012,JPO&INPIT |
