Method for determining process proximity function (PPF) for electron beam exposure of e.g. wafer, involves associating results of line width measurements and exposure amount of patterns, for point-wise determination of PPF

摘要

The method involves exposing a sequence of measuring patterns corresponding to varied exposure amount and limit circle diameter, by an electron beam exposure apparatus. The obtained line widths of measuring pattern are measured subsequently at predetermined points in the measurement model by an electron microscope. The exposure amount and results of line width measurements in a table are associated by computer analysis program corresponding to specific formulas, for point-wise determination of desired PPF. An independent claim is included for measuring pattern for determining PPF.