Y-Doped Barium Strontium Titanate For Stoichiometric Thin Film Growth

摘要

Disclosed is a process for generating thin-film barium strontium titanate (“BST”) having a lattice comprised of a plurality of A lattice sites and a B lattice site, in which a yttrium may be found at a location of at least one location of the plurality of A lattice sites or the B lattice site. In one embodiment, the plurality of A lattice sites comprises a location for at least one from a group consisting of barium and strontium. In one embodiment, the B lattice site comprises a location for a titanium. A capacitor having the inventive Y-doped BST dielectric is also disclosed.