发明名称 |
CHEMICAL MECHANICAL POLISHING PAD, METHOD FOR MANUFACTURING THE SAME, AND CHEMICAL MECHANICAL POLISHING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing pad having excellent storage stability, a method for manufacturing the same, and a chemical mechanical polishing method using the chemical mechanical polishing pad. <P>SOLUTION: The chemical mechanical polishing pad according to the present invention is a chemical mechanical polishing pad comprising a polishing layer, whose surface subjected to polishing has a silicon atom concentration or fluorine atom concentration of 0.5 to 10 atom% calculated by elemental analysis using x-ray photoelectron spectroscopy (XPS). <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012039093(A) |
申请公布日期 |
2012.02.23 |
申请号 |
JP20110145241 |
申请日期 |
2011.06.30 |
申请人 |
JSR CORP |
发明人 |
KUBO KOTARO;OKAMOTO TAKAHIRO;HOSAKA YUKIO |
分类号 |
H01L21/304;B24B37/20;B24B37/26 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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