| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting diode which improves extraction efficiency of light to an outer side using interference phenomenon of the evanescent light in a fine ridge structure. <P>SOLUTION: In the semiconductor light-emitting diode having at least of a first conductivity type barrier layer, an active layer to be a light emitting layer, and a second conductivity type barrier layer, a surface at a light extraction side of the semiconductor light-emitting diode has a ridge structure configured by a flat surface and at least of two inclined plane, a width W of the flat surface of the ridge structure is not more than 2λ (λ:the emission wavelength), and a distance L from a shortest point where total reflection of the light from the center point c of the active layer (a point at the intersection of the center line of the ridge structure with the active layer) takes place in the inclined surface (a point at the intersection of the inclined surface with a line toward the inclined surface from the center C of the active layer forming angle that is θ<SB POS="POST">C</SB>=sin<SP POS="POST">-1</SP>(1/n)[n:a refraction index of the semiconductor layer]to a normal line of the inclined surface) to the flat surface is not more than λ (λ:the emission wavelength). <P>COPYRIGHT: (C)2012,JPO&INPIT |
