METHOD OF PATTERNING SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING SIO2 PATTERN,申请号JP19980053718-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	METHOD OF PATTERNING SEMICONDUCTOR SUBSTRATE AND METHOD OF FORMING SIO2 PATTERN
摘要
申请公布号	JPH11251285(A)	申请公布日期	1999.09.17
申请号	JP19980053718	申请日期	1998.03.05
申请人	OKI ELECTRIC IND CO LTD	发明人	KOBAYASHI MASAO
分类号	H01L21/306;(IPC1-7):H01L21/306	主分类号	H01L21/306
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Solid electrolytic capacitor and method for producing solid electrolytic capacitor

Display device substrate, display device substrate manufacturing method, display device, liquid crystal display device, liquid crystal display device manufacturing method and organic electroluminescent display device

Image processing apparatus and image processing method

Systems and methods for power smoothing in power distribution

Gait analysis system and methods

Bottle with integral dip tube

In-situ cleaning assembly

Method for creating and using affective information in a digital imaging system

Linked semiconductor module unit and electronic circuit-integrated motor vehicle device using same

Motorcycle fairing

Implantable device using ultra-nanocrystalline diamond

System and method of using load network to associate product or service with a consumer token

Method of performing handover in wireless communication system

Directive window ablation antenna with dielectric loading

Cordyline plant named 'Sprilecstar'

Semiconductor multichip module package with improved thermal performance; reduced size and improved moisture resistance

Location aware ad-hoc gaming

System for use in a wellbore