METHOD FOR PREPARING FREESTANDING GROUP III NITRIDE SUBSTRATE

摘要

PURPOSE: A method for manufacturing a free-standing III group nitride substrate is provided to improve the quality of an electronic device by suppressing damage due to laser. CONSTITUTION: An intermediate layer(102) is formed on a host substrate. A hole corresponding to a plurality of load patterns is formed by selectively etching the intermediate layer. A plurality of loads(105) are formed by growing III group nitride in a hole of the intermediate layer. A lateral growing layer(106) is formed as the mold of the III group nitride layer which is epitaxially grown. The epitaxially grown III group nitride layer is formed on the lateral growing layer. The intermediate layer is removed except the plurality of loads. The epitaxially grown III group nitride and the host substrate are separated by removing the plurality of loads.