发明名称 |
High temperature anneal for aluminum surface protection |
摘要 |
The present disclosure also provides another embodiment of a method for making metal gate stacks. The method includes forming a first dummy gate and a second dummy gate on a substrate; removing a polysilicon layer from the first dummy gate, resulting in a first gate trench; forming a first metal layer and a first aluminum layer in the first gate trench; applying a chemical mechanical polishing (CMP) process to the substrate; performing an annealing process to the first aluminum layer using a nitrogen and oxygen containing gas, forming an interfacial layer of aluminum, nitrogen and oxygen on the first aluminum layer; thereafter removing the polysilicon layer from the second dummy gate, resulting in a second gate trench; and forming a second metal layer and a second aluminum layer on the second metal layer in the second gate trench. |
申请公布号 |
US8119473(B2) |
申请公布日期 |
2012.02.21 |
申请号 |
US20090651017 |
申请日期 |
2009.12.31 |
申请人 |
HUANG KUO BIN;LI SSU-YI;CHEN RYAN CHIA-JEN;YANG CHI-MING;CHERN CHYI SHYUAN;LIN CHIN-HSIANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUANG KUO BIN;LI SSU-YI;CHEN RYAN CHIA-JEN;YANG CHI-MING;CHERN CHYI SHYUAN;LIN CHIN-HSIANG |
分类号 |
H01L21/8232 |
主分类号 |
H01L21/8232 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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