发明名称 |
Nanoscale electrodes for phase change memory devices |
摘要 |
A process for preparing a phase change memory semiconductor device comprising a (plurality of) nanoscale electrode(s) for alternately switching a chalcogenide phase change material from its high resistance (amorphous) state to its low resistance (crystalline) state, whereby a reduced amount of current is employed, and wherein the plurality of nanoscale electrodes, when present, have substantially the same dimensions.
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申请公布号 |
US8119528(B2) |
申请公布日期 |
2012.02.21 |
申请号 |
US20080194526 |
申请日期 |
2008.08.19 |
申请人 |
SCHROTT ALEJANDRO G;JOSEPH ERIC A;ROTHWELL MARY BETH;BREITWISCH MATTHEW J;LAM CHUNG H;RAJENDRAN BIPIN;BANGSARUNTIP SARUNYA;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SCHROTT ALEJANDRO G;JOSEPH ERIC A;ROTHWELL MARY BETH;BREITWISCH MATTHEW J;LAM CHUNG H;RAJENDRAN BIPIN;BANGSARUNTIP SARUNYA |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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地址 |
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