发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE: A semiconductor device is provided to offer a semiconductor device with high reliability by forming a length of a second channel under a bending part to be longer than that of a first channel under a line part. CONSTITUTION: A body region is doped with a first conductive dopant. Line parts(LP1,LP2) of a gate pattern are extended to a first direction and have an uniform width. Bending parts(BP1,BP2) of the gate pattern are extended in one end of the line parts. A channel region under the line part has a first channel length to a second direction which is vertical to the first direction. The channel region under the bending part has the second channel length which is longer than the first channel length in different direction from the second direction.</p>
申请公布号 KR20120015180(A) 申请公布日期 2012.02.21
申请号 KR20100077474 申请日期 2010.08.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, YONG DON;LEE, EUNG KYU;BAE, SUNG RYOUL;KIM, SOO BANG;JANG, DONG EUN
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
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