发明名称 |
LOW HARMONIC RF SWITCH IN SOI |
摘要 |
A low harmonic radio-frequency (RF) switch in a silicon-on-insulator (SOI) substrate and methods of manufacture. A method includes forming at least one trench through an insulator layer. The at least one trench is adjacent a device formed in an active region on the insulator layer. The method also includes forming at least one cavity in a substrate under the insulator layer and extending laterally from the at least one trench to underneath the device.
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申请公布号 |
US2012038024(A1) |
申请公布日期 |
2012.02.16 |
申请号 |
US20100853532 |
申请日期 |
2010.08.10 |
申请人 |
BOTULA ALAN B.;DANG DINH;DUNN JAMES S.;JOSEPH ALVIN J.;LINDGREN PETER J.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOTULA ALAN B.;DANG DINH;DUNN JAMES S.;JOSEPH ALVIN J.;LINDGREN PETER J. |
分类号 |
H01L29/06;H01L21/02;H01L21/762 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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