摘要 |
An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer. |
申请人 |
SEOUL OPTO DEVICE CO., LTD.;KIM, CHANG YOUN;LEE, JOON HEE;YOU, JONG KYUN;LIM, HONG CHOL;KIM, HWA MOK |
发明人 |
KIM, CHANG YOUN;LEE, JOON HEE;YOU, JONG KYUN;LIM, HONG CHOL;KIM, HWA MOK |