| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a CMOS imaging device having excellent quantum efficiency and a small cross talk between pixels. <P>SOLUTION: The method for manufacturing a photodetector array or pixel array for a CMOS imaging device includes the steps of: forming a plurality of trenches with a high aspect ratio on the front side of a substrate; and forming a plurality of photodiodes on the front side of a substrate and surrounding each of the plurality of photodiodes by trenches with a high aspect ratio in a face parallel to the front of a substrate. In order to clean the trenches, an oxide layer is formed in the inner wall of the plurality of trenches, and the oxide layer is removed from the inner wall of the plurality of trenches. A trench is filled with a high dope member and a substrate is made thin from the back side. This cleaning restricts the diffusion which passes a side wall, generates unnecessary charge carrier recombination in the trench side wall, and removes a defect, residue and impurities which bring about the cross talk between pixels from the trench side wall. <P>COPYRIGHT: (C)2012,JPO&INPIT |
