| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile storage device which achieves improvement in processability and equalization of characteristics by inhibiting increase in an aspect ratio of a laminate structure. <P>SOLUTION: The nonvolatile storage device of the present embodiment comprises a plurality of first upper lines extending in a first direction, a plurality of first lower lines disposed at a distance from the first upper lines extending in a second direction intersecting the first direction, and a first function layer disposed at an intersection position between the plurality of first upper lines and the plurality of first lower lines and having a transition function for transiting between different resistive states and a rectification function for rectifying current. The first function layer includes a first metal layer, a first counter layer, and a first semiconductor layer disposed between the first metal layer and the first counter layer and contacting both the first metal layer and the first counter layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
