| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve prevention of non-uniform adhesion of a reaction product and prevention of chipping substantially uniformly with good balance on the internal surface of a voltage withstanding dielectric member without complicating an apparatus and without damaging uniformity of plasma on a workpiece. <P>SOLUTION: The plasma etching apparatus comprises a first electrode 4 used for performing plasma processing such as etching by generating plasma 6 from reaction gas in a chamber 1, internal pressure of which can be reduced via a voltage withstanding dielectric member 5, and making the plasma act on a workpiece 2 placed on a counter electrode 3, and a second electrode 7 provided between the first electrode 4 and the voltage withstanding dielectric member 5 in order to prevent adhesion of a reaction product to the internal surface 5a of the voltage withstanding dielectric member 5. Electrode distance L2 of the second electrode 7 from the internal surface 5a of the voltage withstanding dielectric member 5 is set according to the partial difference between the degree of adhesion of a reaction product to the internal surface 5a of the voltage withstanding dielectric member 5 and the amount of chipping of the voltage withstanding dielectric member 5. <P>COPYRIGHT: (C)2012,JPO&INPIT |
