| 发明名称 |
THIN P-TYPE GALLIUM NITRIDE AND ALUMINUM GALLIUM NITRIDE ELECTRON-BLOCKING LAYER FREE GALLIUM NITRIDE-BASED LIGHT EMITTING DIODES |
| 摘要 |
A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer. |
| 申请公布号 |
US2012037884(A1) |
申请公布日期 |
2012.02.16 |
| 申请号 |
US201113250558 |
申请日期 |
2011.09.30 |
| 申请人 |
ZHONG HONG;TYAGI ANURAG;SPECK JAMES S.;DENBAARS STEVEN P.;NAKAMURA SHUJI;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
ZHONG HONG;TYAGI ANURAG;SPECK JAMES S.;DENBAARS STEVEN P.;NAKAMURA SHUJI |
| 分类号 |
H01L33/06;B82Y40/00;B82Y99/00 |
主分类号 |
H01L33/06 |
| 代理机构 |
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代理人 |
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