发明名称 CVD FILM DEPOSITION APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a CVD film deposition apparatus, which restrains worsening of haze ratio distribution of a film when a film deposition treatment to a substrate is continued. <P>SOLUTION: The CVD film deposition apparatus includes: an injector 35, having nozzles 39 supplying a supply gas containing a raw gas for a film to be deposited to a substrate; exhaust flow passages 37, which are formed between a pair of faces 34 opposing across the injector 35 and through each of which the supplied supply gas is exhausted from between the substrate and the injector 35; and an exhaust inlet part 34a, which is formed in the vicinity of the substrate of each face of the pair of faces 34. The distance between the exhaust inlet part 34a and the injector 35 at the central part in the width direction of each of the exhaust flow passages 37 is larger than the distance between the exhaust inlet part 34a and the injector 35 at the both ends in the width direction. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012031492(A) 申请公布日期 2012.02.16
申请号 JP20100173719 申请日期 2010.08.02
申请人 MITSUBISHI HEAVY IND LTD 发明人 SHIMOMURA TOMOHIKO;GOSHI SHUNICHI;MORITA SHINICHI
分类号 C23C16/455;H01L31/04 主分类号 C23C16/455
代理机构 代理人
主权项
地址