| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device that improves light extraction efficiency. <P>SOLUTION: A semiconductor layer bonded substrate manufacturing method comprises a preparation process of causing a growth of a first semiconductor layer 3 having a heat expansion coefficient different from that of a first substrate 2 on a top face 2A of the first substrate 2, a bonded structure formation process of removing, after bonding a second substrate 4 having a heat expansion coefficient nearer to the fist semiconductor layer 3 than the first substrate 2, the first substrate 2 to form a bonded structure 6 on a top face 3A of the first semiconductor layer 3 in which the second substrate 4 and the first semiconductor layer 3 are bonded, and a growth process of further causing a growth of a second semiconductor layer 5 of a composition system same as that of the first semiconductor layer 3 on an exposed surface 7 of the first semiconductor layer 3 on the removed side of the first substrate 2. Accordingly, cracks occurring at the first semiconductor layer 3 can be inhibited at the boundary surface of the first semiconductor layer 3 with the second substrate 4 when causing the growth of the second semiconductor layer 5 on the first semiconductor layer 3. <P>COPYRIGHT: (C)2012,JPO&INPIT |
