| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem with disordered-phase Mn<SB POS="POST">80</SB>Ir<SB POS="POST">20</SB>film and ordered-phase Mn<SB POS="POST">75</SB>Ir<SB POS="POST">25</SB>film which currently are the industry standard as antiferromagnetic film in which, since the crystalline structure of the both film is a cubic crystal, their crystalline magnetic anisotropic energy constant is small, on the order of 10<SP POS="POST">5</SP>erg/cm<SP POS="POST">3</SP>, making resistance to thermal fluctuations insufficient, so that what is known as pin degradation has come to light. <P>SOLUTION: To solve the problem, L1<SB POS="POST">0</SB>Mn<SB POS="POST">50</SB>Ir<SB POS="POST">50</SB>film which has a crystalline magnetic anisotropic energy constant of approximately 2×10<SP POS="POST">8</SP>erg/cm<SP POS="POST">3</SP>is applied as antiferromagnetic film 300 for use in a fixation layer. This ensures that, even for an element in size of 5 nm square and antiferromagnetic film in thickness of 5 nm, a relaxation time of 1.2×10<SP POS="POST">49</SP>years and resistance to thermal fluctuations of an astronomical value will be secured. As for low temperature regulating means of L1<SB POS="POST">0</SB>Mn<SB POS="POST">50</SB>Ir<SB POS="POST">50</SB>group antiferromagnetic film, a dynamic stress and static stress drive MnIr low temperature regulating layer is provided beneath the Mn<SB POS="POST">50</SB>Ir<SB POS="POST">50</SB>film to achieve the objective. <P>COPYRIGHT: (C)2012,JPO&INPIT |
