发明名称 MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING A BIAXIAL ANISOTROPY
摘要 <p>A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has a magnetic anisotropy, at least a portion of which is a biaxial anisotropy. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.</p>
申请公布号 WO2012021297(A1) 申请公布日期 2012.02.16
申请号 WO2011US45662 申请日期 2011.07.28
申请人 GRANDIS, INC.;APALKOV, DMYTRO 发明人 APALKOV, DMYTRO
分类号 H01L43/08;H01F10/32 主分类号 H01L43/08
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