| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device with excellent throughput which can homogeneously anneal an irradiation target with a laser while suppressing an interference effect due to a secondary beam from a rear surface of a substrate. <P>SOLUTION: A manufacturing method of a semiconductor device comprises a step of irradiating a semiconductor film formed on a substrate with a pulsed laser beam using an optical system including at least one galvanometer mirror and an fθ lens. The time t (second) corresponding to the pulse width of the laser beam is calculated from the formula t<2nd/c, where n is the refractive index of the substrate, d (meter) is the thickness of the substrate, and c (meter/second) is the light speed in vacuum. The pulse width of the laser beam is selected from the calculated t range, and then the irradiation with the laser beam is performed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
