SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To suppress the drain current collapse.

SOLUTION: A semiconductor device has: a source electrode 20, a gate electrode 24, and a drain electrode 22 formed on a nitride semiconductor layer 19; a silicon nitride film 26 formed on the nitride semiconductor layer in a state contacted with it; and an organic insulation film 32 provided in a state contacted with an upper surface of the silicon nitride film between the gate electrode and the drain electrode.

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