| 发明名称 |
PROTECTIVE FILM, METHOD FOR FORMING THE SAME, SEMICONDUCTOR MANUFACTURING APPARATUS, AND PLASMA TREATMENT APPARATUS |
| 摘要 |
According to one embodiment, a protective film formed on a component in a plasma treatment apparatus and having a plasma resistance includes a base film formed on the component and having a concave-convex structure, and an upper film formed on the base film to cover the concave-convex structure. |
| 申请公布号 |
US2012040132(A1) |
申请公布日期 |
2012.02.16 |
| 申请号 |
US201113208896 |
申请日期 |
2011.08.12 |
| 申请人 |
ETO HIDEO;SAITO MAKOTO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
ETO HIDEO;SAITO MAKOTO |
| 分类号 |
B32B3/10;B05D5/12;B32B3/00;C22C21/00;C23C28/00;C23F1/00 |
主分类号 |
B32B3/10 |
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