| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new II-III-N semiconductor nanoparticle, and a method of manufacturing the same. <P>SOLUTION: This invention provides a nitride semiconductor nanoparticle (for example, a nanocrystal). The nitride semiconductor nanoparticle is formed of a new II-III-N compound semiconductor having a new composition (for example, ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN or ZnAlGaInN). This type of compound semiconductor nanoparticle is not conventionally known. The invention also discloses a II-N semiconductor nanocrystal (for example, a ZnN nanocrystal) which is a subgroup of the II-III-N semiconductor nanoparticle. <P>COPYRIGHT: (C)2012,JPO&INPIT |
