发明名称 |
Semiconductor Device and Method of Forming B-Stage Conductive Polymer Over Contact Pads of Semiconductor Die in FO-WLCSP |
摘要 |
A semiconductor wafer contains a plurality of semiconductor die with bumps formed over contact pads on an active surface of the semiconductor die. A b-stage conductive polymer is deposited over the contact pads on the semiconductor wafer. The semiconductor wafer is singulated to separate the die. An insulating layer is formed over a carrier with openings formed in the insulating layer. The die is mounted to the carrier with the conductive polymer disposed in the openings of the insulating layer. The conductive polymer is heated to a glass transition temperature to liquefy the conductive polymer to an electrically conductive state. An encapsulant is deposited over the die and insulating layer. The carrier is removed to expose the conductive polymer. An interconnect structure is formed over the die, encapsulant, and conductive polymer. The interconnect structure is electrically connected through the conductive polymer to the contact pads on the die.
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申请公布号 |
US2012038047(A1) |
申请公布日期 |
2012.02.16 |
申请号 |
US20100853898 |
申请日期 |
2010.08.10 |
申请人 |
DO BYUNG TAI;PAGAILA REZA A.;STATS CHIPPAC, LTD. |
发明人 |
DO BYUNG TAI;PAGAILA REZA A. |
分类号 |
H01L23/485;H01L21/50;H01L21/56 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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