MANUFACTURING METHOD FOR NITRIDE COMPOUND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for a nitride semiconductor device by which damage layers are not formed despite the fact that dry etching is performed, and by which wet etching is performed with a small number of processes and through simple batch processing. SOLUTION: The manufacturing method for the nitride semiconductor device comprises a step to form a nitride semiconductor layer 13 on a base substrate 11, a step to form a conductive film 14 of an electron emitting layer 14b and dry etching mask layer 14a in sequence on a part of the upper surface of the nitride semiconductor layer 13, a step to perform dry etching on the nitride semiconductor layer 13, and a step to perform wet etching on the nitride semiconductor layer 13 by emitting electrons from the nitride semiconductor layer 13 to the outside through the conductive film 14. COPYRIGHT: (C)2005,JPO&NCIPI