| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystalline semiconductor film in which the position of crystal grains can be controlled, a method of manufacturing the same, and so on. SOLUTION: The method of manufacturing a crystalline semiconductor film includes (a) a step of forming an amorphous semiconductor film; (b) a step of forming an insulating film having a first refractive index n1 on the amorphous semiconductor film; (c) a step of forming a cap layer having a first refractive-index region with a first refractive index n1 and a second refractive-index region with a second refractive index n2, by selectively changing the composition of a prescribed region of the insulating film to change the refractive index of the prescribed region from the first refractive index n1 to the second refractive index n2; and (d) a step of crystallization for crystallizing the amorphous semiconductor film by forming a high-temperature melting region in at least a part of the amorphous semiconductor film under the first refractive-index region, and forming a low-temperature melting region in at least a part of the amorphous semiconductor film under the second refractive-index region by irradiating the amorphous semiconductor film with a light beam through the cap layer. COPYRIGHT: (C)2005,JPO&NCIPI
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