| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a large remanent polarization indispensable to nonvolatile memory operation by forming a specific buffer dielectric layer between an electrode constituting the capacitor element of a semiconductor device and a capacitor insulation film. SOLUTION: In the semiconductor device comprising a capacitor element provided with a ferroelectric film (109) and counter electrodes (108, 110), a buffer dielectric layer (114) represented by a general formula C<SB>2</SB>D<SB>2</SB>O<SB>7</SB>(where, C is at least one element selected from among a group of Sr, Ba, Ca, La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and V, D is at least one element selected from among a group of Ti, Nb and Ta) is formed between the ferroelectric film (109) and at least one of the counter electrodes (108, 110). COPYRIGHT: (C)2005,JPO&NCIPI
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