| 摘要 |
A semiconductor device comprises a gate electrode, first and second sidewall insulating films, a gate electrode head, and first and second diffusion regions. The gate electrode is provided on a gate insulating film formed on a substrate, and its first and second sides are formed with a first sidewall surface and a second sidewall surface facing to the first sidewall surface, respectively, thereby having a first width. The first sidewall insulating film is formed on the substrate on the first side of the gate electrode, and has a first inner wall surface facing to and apart from the first sidewall surface. The second sidewall insulating film is formed on the substrate on the second side of the gate electrode, and has a second inner wall surface facing to and apart from the second sidewall surface. The gate electrode head is so formed on the gate electrode as to extend from the first inner wall surface to the second inner wall surface and has a second width larger than the first width. The first and second diffusion regions are formed in the substrate on both the first and second sides. The gate electrode head is formed in continuity with the gate electrode, and at least the lower part contacting the gate insulating film of the gate electrode is made of polysilicon.
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