SIMULATION DEVICE, SIMULATION METHOD AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a simulation device capable of performing high-precision circuit analysis in a relatively short time based on a physical model incorporating defective level. SOLUTION: This simulation device includes an input device 11, a storage device 12, a calculation device 16, a control device 15 and an output device 17. Based on a first potentialϕSOof a source region end of a gate electrode side surface of a polycrystalline silicon thin film corresponding to a gate electrode end in a TFT input from the input device, a second potentialϕbOof the source region end of the rear surface side facing the surface on which a gate electrode is formed in the polycrystalline silicon thin film, a third potentialϕSLof a drain region end of the gate electrode side surface of the polycrystalline silicon thin film corresponding to the gate electrode end in the TFT and a fourth potentialϕbLof the drain region end of the rear surface side facing the surface on which the gate electrode is formed in the polycrystalline silicon thin film, calculation is performed to obtain a drain current Ids, and to perform modeling containing the defective level. COPYRIGHT: (C)2008,JPO&INPIT