| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for preventing the collector resistance of a vertical NPN transistor from increasing, with respect to the manufacturing method of a semiconductor device that is equipped with a vertical PNP transistor and a vertical NPN transistor. SOLUTION: In the manufacturing method of the semiconductor device equipped with a vertical PNP transistor and a vertical NPN transistor, an insulating film 55, containing first n-type impurities and second n-type impurities with a larger diffusing constant than that of the first n-type impurities, is formed on a semiconductor substrate 11 of a portion, corresponding to the formation position of an n-type embedding diffusion layer 41, and the n-type embedding diffusion layer 41 is formed, by heating the semiconductor substrate 11 wherein the insulating film 55 is formed, and then by making the first and second n-type impurities diffuse to the semiconductor substrate 11. COPYRIGHT: (C)2008,JPO&INPIT
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