发明名称 |
Reducing device performance drift caused by large spacings between active regions |
摘要 |
A method of forming an integrated circuit structure includes providing a semiconductor substrate; and forming a first and a second MOS device. The first MOS device includes a first active region in the semiconductor substrate; and a first gate over the first active region. The second MOS device includes a second active region in the semiconductor substrate; and a second gate over the second active region. The method further include forming a dielectric region between the first and the second active regions, wherein the dielectric region has an inherent stress; and implanting the dielectric region to form a stress-released region in the dielectric region, wherein source and drain regions of the first and the second MOS devices are not implanted during the step of implanting. |
申请公布号 |
US8115271(B2) |
申请公布日期 |
2012.02.14 |
申请号 |
US201113155251 |
申请日期 |
2011.06.07 |
申请人 |
CHUANG HARRY;THEI KONG-BENG;LIANG MONG-SONG;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHUANG HARRY;THEI KONG-BENG;LIANG MONG-SONG |
分类号 |
H01L21/70 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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