发明名称 |
Methods of forming memory cells on pillars and memories with memory cells on pillars |
摘要 |
Methods of fabricating memory are disclosed. For example, a method includes fabricating rows of memory cells on pillars separated by isolation regions therebetween. Each pillar has a pair of memory cells, each on an opposite side thereof. The method also includes fabricating control gates substantially between the rows of memory cells, each control gate to control half the cells of each of its adjacent rows of memory cells, and fabricating word lines for the array, the word lines extending substantially parallel to the control gates for the cells. |
申请公布号 |
US8114737(B2) |
申请公布日期 |
2012.02.14 |
申请号 |
US20090579927 |
申请日期 |
2009.10.15 |
申请人 |
LINDSAY ROGER W.;JONES LYLE;MICRON TECHNOLOGY, INC. |
发明人 |
LINDSAY ROGER W.;JONES LYLE |
分类号 |
H01L21/336;H01L21/8247;H01L27/115;H01L29/788 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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