发明名称 |
Solid-state image capturing apparatus, method for manufacturing same, and electronic information device |
摘要 |
A solid-state image capturing apparatus according to the present invention includes: a plurality of photoelectric conversion sections; a charge accumulation section; and a charge readout section, the apparatus further includes: a semiconductor substrate including a plurality of diffusion layers formed thereabove, the diffusion layers constituting the photoelectric conversion sections, the charge accumulation section and the charge readout section; a readout gate electrode formed above the semiconductor substrate and constituting the charge readout section; an insulation sidewall formed on a side surface of the readout gate electrode; and a surface diffusion layer constituting the photoelectric conversion sections, which is positioned in a self-aligning manner with respect to the readout gate electrode by the insulation sidewall.
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申请公布号 |
US8115851(B2) |
申请公布日期 |
2012.02.14 |
申请号 |
US20090591524 |
申请日期 |
2009.11.23 |
申请人 |
MUTOH AKIYOSHI;SHARP KABUSHIKI KAISHA |
发明人 |
MUTOH AKIYOSHI |
分类号 |
H04N3/14;H01L21/00;H01L21/339;H01L27/146;H01L27/148;H04N5/335 |
主分类号 |
H04N3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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